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MPSH11_D27Z

ON Semiconductor

MPSH11_D27Z

RF BJT Transistors

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Specifications

Power Max
350mW
Frequency Transition
650MHz
Montaj Tipi
Through Hole
Currentcollector Ic Max
50mA
Parça Durumu
Obsolete
Dc Current Gain Hfe Min Ic Vce
60 @ 4mA 10V
Tedarikçi Cihaz Paketi
TO-92-3
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Ambalaj
Tape & Reel (TR)
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25V
Yayın Yılı
2011
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
-55°C~150°C TJ

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