Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- RoHS Compliant
- Radyasyon Dayanımı
- No
- Collector Emitter Voltage Vceo
- 25V
- Polaritychannel Type
- NPN
- Pin Sayısı
- 3
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 23 hours ago)
- Transition Frequency
- 650MHz
- Ambalaj
- Tape & Box (TB)
- Temel Parça No
- MPSH10
- Transistor Type
- NPN
- Voltage Rated Dc
- 25V
- Max Power Dissipation
- 350W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- BOTTOM
- Power Dissipation
- 350W
- Collectoremitter Saturation Voltage
- 500mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Akım Değeri
- 4mA
- Frekans
- 650MHz
- Collector Base Voltage Vcbo
- 30V
- Hfemin
- 60
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2007
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 650MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yüzey Montaj
- NO
- Emitter Base Voltage Vebo
- 3V
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e1
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 4mA 10V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Max
- 350mW
- Montaj Tipi
- Through Hole
- Terminal Sayısı
- 3
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
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