Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Base Voltage Vcbo
- 30V
- Hfemin
- 60
- Tepe Reflow Sıcaklığı (°C)
- 260
- Akım Değeri
- 4mA
- Frekans
- 650MHz
- Power Dissipation
- 350W
- Collectoremitter Saturation Voltage
- 500mV
- Voltage Rated Dc
- 25V
- Max Power Dissipation
- 350W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- BOTTOM
- Ambalaj
- Bulk
- Temel Parça No
- MPSH10
- Transistor Type
- NPN
- Genişlik
- 4.191mm
- Yükseklik
- 5.334mm
- Pin Sayısı
- 3
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transition Frequency
- 650MHz
- Radyasyon Dayanımı
- No
- RoHS Durumu
- RoHS Compliant
- Collector Emitter Voltage Vceo
- 25V
- Polaritychannel Type
- NPN
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz Kodu
- yes
- Uzunluk
- 5.1816mm
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 25V
- Power Max
- 350mW
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Collectorbase Capacitancemax
- 0.7pF
- JESD-609 Kodu
- e1
- Element Configuration
- Single
- Number Of Elements
- 1
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 4mA 10V
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