Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- 40V
- Fet Feature
- Logic Level Gate
- Current Continuous Drain Id25
- 3.4A
- Max Power Dissipation
- 1.39W
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 80m Ω @ 3.4A, 10V
- Feedback Capmax Crss
- 96 pF
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
- Continuous Drain Current Id
- 3A
- Gate Charge Qg Max Vgs
- 28nC @ 10V
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 15 ns
- Akım Değeri
- 3A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Input Capacitance Ciss Max Vds
- 900pF @ 32V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Drain Currentmax Abs Id
- 3.4A
- Yayın Yılı
- 2006
- Voltage Rated Dc
- 30V
- Terminal Sayısı
- 8
- Pin Sayısı
- 8
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 3V @ 250μA
- RoHS Durumu
- RoHS Compliant
- Transistor Element Material
- SILICON
- Lifecycle Status
- OBSOLETE (Last Updated: 4 days ago)
- Fet Type
- 2 N-Channel (Dual)
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Parça Durumu
- Obsolete
- Qualification Status
- Not Qualified
- Rise Time
- 15ns
- Montaj
- Surface Mount
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