MMDF3N04HDR2G

Specifications

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Drain To Source Breakdown Voltage

40V

Fet Feature

Logic Level Gate

Current Continuous Drain Id25

3.4A

Max Power Dissipation

1.39W

Transistor Application

SWITCHING

Rds On Max Id Vgs

80m Ω @ 3.4A, 10V

Feedback Capmax Crss

96 pF

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

3A

Gate Charge Qg Max Vgs

28nC @ 10V

JESD-609 Kodu

e3

Turn Off Delay Time

15 ns

Akım Değeri

3A

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

900pF @ 32V

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

40

Drain Currentmax Abs Id

3.4A

Yayın Yılı

2006

Voltage Rated Dc

30V

Terminal Sayısı

8

Pin Sayısı

8

Terminal Formu

GULL WING

Vgsth Max Id

3V @ 250μA

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Lifecycle Status

OBSOLETE (Last Updated: 4 days ago)

Fet Type

2 N-Channel (Dual)

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Rise Time

15ns

Montaj

Surface Mount