MMDF2P02HDR2

Specifications

Akım Değeri

-2A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

20nC @ 10V

JESD-609 Kodu

e0

Turn Off Delay Time

25 ns

ECCN Kodu

EAR99

Voltage Rated Dc

-20V

Yayın Yılı

2009

Tepe Reflow Süresi (maks. sn)

30

Input Capacitance Ciss Max Vds

588pF @ 16V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Power Dissipation

2W

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-20V

Fet Feature

Logic Level Gate

Number Of Elements

2

REACH Uyumluluk Kodu

not_compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Feedback Capmax Crss

232 pF

Continuous Drain Current Id

3.3A

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

160m Ω @ 2A, 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Montaj

Surface Mount

Fall Time Typ

37 ns

Drainsource On Resistancemax

0.16Ohm

Temel Parça No

MMDF2P02HD

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

240

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

Non-RoHS Compliant

Transistor Element Material

SILICON

Pin Sayısı

8

Terminal Sayısı

8

Vgsth Max Id

2V @ 250μA