Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- Qualification Status
- Not Qualified
- Rise Time
- 29ns
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- OBSOLETE (Last Updated: 3 days ago)
- Fet Type
- 2 P-Channel (Dual)
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 3V @ 250μA
- Terminal Sayısı
- 8
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Power Dissipation
- 2W
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Additional Feature
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Drainsource On Resistancemax
- 0.25Ohm
- Montaj
- Surface Mount
- Fall Time Typ
- 28 ns
- Continuous Drain Current Id
- 2.5A
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Rds On Max Id Vgs
- 250m Ω @ 2A, 10V
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 2W
- Number Of Elements
- 2
- Fet Feature
- Logic Level Gate
- Drain To Source Breakdown Voltage
- -25V
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2006
- Voltage Rated Dc
- -25V
- Drain To Source Voltage Vdss
- 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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