Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 1A
- Uzunluk
- 5mm
- Pulsed Drain Currentmax Idm
- 10A
- Turn Off Delay Time
- 40 ns
- Gate Charge Qg Max Vgs
- 12.5nC @ 10V
- Drain Currentmax Abs Id
- 2A
- Voltage Rated Dc
- 50V
- Yayın Yılı
- 2006
- Input Capacitance Ciss Max Vds
- 330pF @ 25V
- Max Power Dissipation
- 2W
- Drain To Source Breakdown Voltage
- 50V
- Operating Mode
- ENHANCEMENT MODE
- Threshold Voltage
- 3V
- Terminal Kaplaması
- Tin (Sn)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Yüzey Montaj
- YES
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Direnç
- 300MOhm
- Fall Time Typ
- 25 ns
- Temel Parça No
- MMDF1N05E
- Tepe Reflow Sıcaklığı (°C)
- 260
- Genişlik
- 4mm
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Vgsth Max Id
- 3V @ 250μA
- Kurşunsuz Kodu
- yes
- Lifecycle Status
- OBSOLETE (Last Updated: 1 day ago)
- Fet Type
- 2 N-Channel (Dual)
- Avalanche Energy Rating Eas
- 300 mJ
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 40
- Turn On Delay Time
- 20 ns
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Reach Svhc
- No SVHC
- Fet Feature
- Logic Level Gate
- Number Of Elements
- 2
- Gate To Source Voltage Vgs
- 20V
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