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MMBTH81

ON Semiconductor

MMBTH81

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.06
  • 10+ pcs$0.05
  • 100+ pcs$0.05
  • 500+ pcs$0.05

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Specifications

Transistor Application
AMPLIFIER
Emitter Base Voltage Vebo
3V
Uzunluk
2.92mm
ECCN Kodu
EAR99
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Sayısı
3
Frekans
600MHz
Transistor Element Material
SILICON
Collector Base Voltage Vcbo
20V
Çalışma Sıcaklığı
-55°C~150°C TJ
Max Power Dissipation
225mW
JESD-609 Kodu
e3
Fabrika Tedarik Süresi
42 Weeks
Number Of Elements
1
Terminal Formu
GULL WING
Collector Emitter Voltage Vceo
20V
Continuous Collector Current
50mA
Genişlik
1.3mm
Kurşunsuz Kodu
yes
Yayın Yılı
2000
Dc Current Gain Hfe Min Ic Vce
60 @ 5mA 10V
Transistor Type
PNP
Max Breakdown Voltage
20V
Collectoremitter Saturation Voltage
500mV
Weight
30mg
Akım Değeri
-50mA
Voltage Rated Dc
-20V
Radyasyon Dayanımı
No
Parça Durumu
Active
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Transition Frequency
600MHz
Collectoremitter Breakdown Voltage
20V
Terminal Pozisyonu
DUAL
Ambalaj
Tape & Reel (TR)
Power Dissipation
225mW
Pin Sayısı
3
Gain Bandwidth Product
600MHz
Montaj Tipi
Surface Mount
Max Junction Temperature Tj
150°C

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