Volume pricing
- 1+ pcs$0.01
- 500+ pcs$0.01
- 1000+ pcs$0.01
- 2000+ pcs$0.00
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Breakdown Voltage
- 30V
- Weight
- 30mg
- Akım Değeri
- 50mA
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 8mA 10V
- Transistor Type
- NPN
- Terminal Kaplaması
- Tin (Sn)
- Yayın Yılı
- 2002
- Genişlik
- 1.3mm
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 30V
- Continuous Collector Current
- 50mA
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 7 Weeks
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 225mW
- JESD-609 Kodu
- e3
- Terminal Sayısı
- 3
- Frekans
- 400MHz
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 40V
- Transistor Application
- AMPLIFIER
- Uzunluk
- 2.92mm
- Emitter Base Voltage Vebo
- 4V
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 930μm
- Hfemin
- 30
- Element Configuration
- Single
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Polaritychannel Type
- NPN
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current
- 50mA
- Tepe Reflow Süresi (maks. sn)
- 30
- Pin Sayısı
- 3
- Gain Bandwidth Product
- 400MHz
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Temel Parça No
- MMBTH24
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