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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 3mA 1V
- Transistor Type
- NPN
- Max Breakdown Voltage
- 12V
- Weight
- 30mg
- Akım Değeri
- 50mA
- Collector Emitter Voltage Vceo
- 12V
- Continuous Collector Current
- 50mA
- Terminal Kaplaması
- Tin (Sn)
- Kurşunsuz Kodu
- yes
- Genişlik
- 1.3mm
- Yayın Yılı
- 2001
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gain
- 15dB
- Max Power Dissipation
- 225mW
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 42 Weeks
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Noise Figure Db Typ F
- 5dB @ 200MHz
- Transistor Application
- AMPLIFIER
- Emitter Base Voltage Vebo
- 2.5V
- Uzunluk
- 2.92mm
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Frekans
- 2GHz
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 20V
- Hfemin
- 25
- Reach Svhc
- No SVHC
- Lifecycle Status
- ACTIVE (Last Updated: 20 hours ago)
- Element Configuration
- Single
- Yükseklik
- 930μm
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current
- 50mA
- Polaritychannel Type
- NPN
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- DUAL
- Power Dissipation
- 225mW
- Vcesatmax
- 0.4 V
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