MCH6660-TL-W

Specifications

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Terminal Sayısı

6

Fabrika Tedarik Süresi

7 Weeks

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Parça Durumu

Active

Pin Sayısı

6

JESD-609 Kodu

e6

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Elements

2

Çalışma Sıcaklığı

150°C TJ

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Rds On Max Id Vgs

136m Ω @ 1A, 4.5V

Current Continuous Drain Id25

2A 1.5A

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Max Power Dissipation

800mW

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

128pF @ 10V

Continuous Drain Current Id

1.5A

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

1.8nC @ 4.5V

Drain To Source Voltage Vdss

20V

Drain Currentmax Abs Id

2A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Gate To Source Voltage Vgs

10V

Fet Type

N and P-Channel

Kılıf / Paket

6-SMD, Flat Leads

Vgsth Max Id

1.3V @ 1mA

Ds Breakdown Voltagemin

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Fet Feature

Logic Level Gate, 1.8V Drive