Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 14.5 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Kılıf / Paket
- 6-SMD, Flat Leads
- Fet Type
- N and P-Channel
- Drain Currentmax Abs Id
- 2A
- Gate To Source Voltage Vgs
- 10V
- Gate Charge Qg Max Vgs
- 1.8nC @ 4.5V
- Input Capacitance Ciss Max Vds
- 128pF @ 10V
- Continuous Drain Current Id
- 1.5A
- Power Dissipation
- 800mW
- Drain To Source Breakdown Voltage
- 20V
- Yüzey Montaj
- YES
- Uzunluk
- 2mm
- RoHS Durumu
- RoHS Compliant
- Rise Time
- 11ns
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Yükseklik
- 850μm
- Max Power Dissipation
- 800mW
- Element Configuration
- Dual
- Current Continuous Drain Id25
- 2A 1.5A
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 136m Ω @ 1A, 4.5V
- Kurşunsuz
- Lead Free
- Yayın Yılı
- 2013
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- 150°C TJ
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Number Of Elements
- 2
- Pin Sayısı
- 6
- Parça Durumu
- Obsolete
- Pin Sayısı
- 6
- JESD-609 Kodu
- e6
- Genişlik
- 1.6mm
- Turn On Delay Time
- 5.1 ns
- Terminal Kaplaması
- Tin/Bismuth (Sn/Bi)
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