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C3 ChipZentronix
MBT6429DW1T1G

ON Semiconductor

MBT6429DW1T1G

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Çalışma Sıcaklığı
-55°C~150°C TJ
RoHS Durumu
ROHS3 Compliant
Kurşunsuz Kodu
yes
Element Configuration
Dual
Frekans
700MHz
Voltage Rated Dc
40V
Pin Sayısı
6
Tepe Reflow Sıcaklığı (°C)
260
Max Breakdown Voltage
45V
Collectoremitter Breakdown Voltage
45V
Pin Sayısı
6
Fabrika Tedarik Süresi
8 Weeks
Temel Parça No
MBT6429D
Terminal Sayısı
6
Transistor Type
2 NPN (Dual)
Terminal Formu
GULL WING
Max Power Dissipation
150mW
JESD-609 Kodu
e3
Kurşunsuz
Lead Free
Parça Durumu
Active
Montaj Tipi
Surface Mount
Transition Frequency
100MHz
Power Dissipation
150mW
Yayın Yılı
2005
Gain Bandwidth Product
700MHz
Tepe Reflow Süresi (maks. sn)
40
ECCN Kodu
EAR99
Transistor Application
AMPLIFIER
Collectoremitter Saturation Voltage
600mV
Collector Base Voltage Vcbo
55V
Genişlik
1.35mm
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
Uzunluk
2.2mm
Number Of Elements
2
Transistor Element Material
SILICON
Emitter Base Voltage Vebo
6V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Collector Current
200mA
Collector Emitter Voltage Vceo
45V
Current Collector Cutoff Max
100nA

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