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MBR8H100MFST3G

ON Semiconductor

MBR8H100MFST3G

Single-Phase Diode Rectifier

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.28
  • 10+ pcs$0.26
  • 100+ pcs$0.25
  • 500+ pcs$0.23

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RoHS

Compliant

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Specifications

Voltage Forward Vf Max If
900mV @ 8A
Terminal Formu
FLAT
Diode Type
Schottky
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Peak Nonrepetitive Surge Current
75A
ECCN Kodu
EAR99
Montaj
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Ambalaj
Tape & Reel (TR)
JESD-609 Kodu
e3
Max Repetitive Reverse Voltage Vrrm
100V
Additional Feature
LOW POWER LOSS
Case Connection
CATHODE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Element Configuration
Single
REACH Uyumluluk Kodu
not_compliant
Fabrika Tedarik Süresi
6 Weeks
Jesd30 Code
R-PDSO-F5
Terminal Sayısı
5
Average Rectified Current
8A
Diode Element Material
SILICON
Maks. Çalışma Sıcaklığı
175°C
Terminal Kaplaması
Tin (Sn)
Montaj Tipi
Surface Mount
Kılıf / Paket
8-PowerTDFN, 5 Leads
Number Of Phases
1
Applications
EFFICIENCY
Kurşunsuz Kodu
yes
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Current Reverse Leakage Vr
2μA @ 100V
Yayın Yılı
2015
Terminal Pozisyonu
DUAL
Number Of Elements
1
Max Reverse Voltage Dc
100V
Peak Reverse Current
2μA
Operating Temperature Junction
-55°C~175°C
Min. Çalışma Sıcaklığı
-55°C
Output Currentmax
8A

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