MBR30H30CTG

Specifications

Applications

EFFICIENCY

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Peak Reverse Current

800μA

Number Of Elements

2

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

SINGLE

Yayın Yılı

2007

Operating Temperature Junction

-55°C~150°C

Diode Type

Schottky

Current Reverse Leakage Vr

800μA @ 30V

Number Of Phases

1

Average Rectified Current

15A

Pin Sayısı

3

Diode Configuration

1 Pair Common Cathode

Element Configuration

Common Cathode

Max Repetitive Reverse Voltage Vrrm

30V

Voltage Forward Vf Max If

480mV @ 15A

Kurşunsuz

Lead Free

Ambalaj

Tube

Terminal Sayısı

3

Kurşunsuz Kodu

yes

Max Forward Surge Current Ifsm

260A

Maks. Çalışma Sıcaklığı

150°C

Max Reverse Voltage Dc

30V

Parça Durumu

Active

Max Reverse Leakage Current

800μA

Forward Voltage

550mV

Diode Element Material

SILICON

Min. Çalışma Sıcaklığı

-55°C

Max Surge Current

260A

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Additional Feature

LOW POWER LOSS

HTS Kodu

8541.10.00.80

Montaj Tipi

Through Hole

Peak Nonrepetitive Surge Current

260A

JESD-609 Kodu

e3