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MBD770DWT1G

ON Semiconductor

MBD770DWT1G

RF Diodes

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.29
  • 10+ pcs$0.27
  • 100+ pcs$0.26
  • 500+ pcs$0.24

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Genuine parts

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RoHS

Compliant

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Specifications

Peak Reverse Current
200nA
Power Dissipation Max
380mW
Pin Sayısı
6
ECCN Kodu
EAR99
Forward Current
100mA
Genişlik
1.35mm
RoHS Durumu
ROHS3 Compliant
Terminal Sayısı
6
Max Repetitive Reverse Voltage Vrrm
70V
Number Of Elements
2
Max Forward Surge Current Ifsm
1A
Yüzey Montaj
YES
Ambalaj
Tape & Reel (TR)
Voltage Rated Dc
70V
Capacitance Vr F
1pF @ 20V 1MHz
Forward Voltage
1V
Reference Standard
AEC-Q101
Fabrika Tedarik Süresi
2 Weeks
Pin Sayısı
6
Diode Type
Schottky - 2 Independent
Halogen Free
Halogen Free
Parça Durumu
Active
Yayın Yılı
2009
Terminal Kaplaması
Tin (Sn)
Çalışma Sıcaklığı
-55°C~150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Süresi (maks. sn)
40
Diode Element Material
SILICON
Power Dissipation
120mW
Diode Capacitancemax
1pF
Temel Parça No
MBD770
Element Configuration
Dual
Tepe Reflow Sıcaklığı (°C)
260
Yükseklik
1mm
Uzunluk
2.2mm
Kurşunsuz
Lead Free
Terminal Formu
GULL WING
Reach Svhc
No SVHC
JESD-609 Kodu
e3
Radyasyon Dayanımı
No

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