IRFW530ATM

Specifications

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Drain To Source Resistance

110 mΩ

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Pulsed Drain Currentmax Idm

56 A

Polaritychannel Type

N-CHANNEL

Package Description

D2PAK-3

Operating Mode

ENHANCEMENT MODE

Typical Rise Time Ns

14

Ds Breakdown Voltagemin

100 V

Rise Time

14 ns

Transistor Application

SWITCHING

Power Dissipationmax Abs

3.8 W

Ambalaj

Tape and Reel

Element Configuration

Single

Svhc

Yes

Typical Gate Charge Vgs Nc

27@10V

Part Package Code

D2PAK

Maximum Continuous Drain Current A

14

Parça Durumu

Obsolete

RoHS

Compliant

Typical Input Capacitance Vds Pf

610@25V

Üretici Parça No

IRFW530ATM

Typical Fall Time Ns

36

Gate To Source Voltage Vgs

20 V

Maks. Çalışma Sıcaklığı

175 °C

Power Dissipation

55 W

Typical Turnoff Delay Time Ns

55

Number Of Elements Per Chip

1

Package Style

SMALL OUTLINE

Min. Çalışma Sıcaklığı

-55 °C

Pin Sayısı

3

Jedec95 Code

TO-263AB

Ppap

No

Rohs Code

Yes

Risk Rank

5.38

Channel Type

N

Number Of Terminals

2

Akım Değeri

14 A