Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Maximum Drain Source Resistance Mohm
- 1750@10V
- Package Height
- 2.39(Max)
- Ds Breakdown Voltagemin
- 400 V
- Svhc Exceeds Threshold
- Yes
- Configuration
- Single
- Jedec95 Code
- TO-252
- Moisture Sensitivity Levels
- 1
- Pin Sayısı
- 3
- Package Shape
- RECTANGULAR
- Reflow Temperaturemax S
- NOT SPECIFIED
- Rohs Code
- Yes
- Qualification Status
- COMMERCIAL
- Package Style
- SMALL OUTLINE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Obsolete
- Typical Fall Time Ns
- 35
- Maximum Operating Temperature C
- 150
- Typical Rise Time Ns
- 35
- Eccn Us
- EAR99
- Avalanche Energy Rating Eas
- 240 mJ
- Supplier Package
- DPAK
- Jesd30 Code
- R-PSSO-G2
- Terminal Kaplaması
- MATTE TIN
- Category
- Power MOSFET
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Hts
- 8542.31.00.01
- JESD-609 Kodu
- e3
- Ambalaj
- Tape and Reel
- Kurşunsuz Kodu
- Yes
- Package Description
- DPAK-3
- Maximum Continuous Drain Current A
- 3.1
- Risk Rank
- 5.12
- Typical Gate Charge10v Nc
- 14
- Process Technology
- DMOS
- Maximum Power Dissipation Mw
- 2500
- Polaritychannel Type
- N-CHANNEL
- Minimum Operating Temperature C
- -55
- Transistor Application
- SWITCHING
- Ihs Manufacturer
- ROCHESTER ELECTRONICS LLC
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