Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Akım Değeri
- 4.8A
- Kurşunsuz
- Lead Free
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e4
- Montaj Tipi
- Surface Mount
- Qualification Status
- Not Qualified
- Weight
- 230.4mg
- Input Capacitance Ciss Max Vds
- 620pF @ 25V
- Power Dissipation
- 2.5W
- Fall Time Typ
- 27 ns
- Terminal Formu
- GULL WING
- Fet Type
- 2 N-Channel (Dual)
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Turn Off Delay Time
- 45 ns
- Voltage Rated Dc
- 60V
- Montaj
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 5.1A
- Rise Time
- 19ns
- Tepe Reflow Süresi (maks. sn)
- 30
- Tepe Reflow Sıcaklığı (°C)
- 260
- Seri
- UltraFET™
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 3V @ 250μA
- Max Power Dissipation
- 2.5W
- Terminal Sayısı
- 8
- Additional Feature
- ULTRA-LOW RESISTANCE
- Pin Sayısı
- 8
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 2
- RoHS Durumu
- RoHS Compliant
- Drain To Source Breakdown Voltage
- 60V
- Gate To Source Voltage Vgs
- 16V
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 49m Ω @ 5.1A, 10V
- Fet Feature
- Logic Level Gate
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