Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e4
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 330pF @ 25V
- Qualification Status
- Not Qualified
- Terminal Formu
- GULL WING
- Jedec95 Code
- MS-012AA
- Ds Breakdown Voltagemin
- 60V
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fet Type
- 2 N-Channel (Dual)
- Kurşunsuz Kodu
- yes
- Power Max
- 2.5W
- Operating Mode
- ENHANCEMENT MODE
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Yüzey Montaj
- YES
- Tepe Reflow Sıcaklığı (°C)
- 260
- Tepe Reflow Süresi (maks. sn)
- 30
- Vgsth Max Id
- 3V @ 250μA
- Ambalaj
- Tape & Reel (TR)
- Seri
- Automotive, AEC-Q101, UltraFET™
- Terminal Sayısı
- 8
- Jesd30 Code
- R-PDSO-G8
- Additional Feature
- ULTRA-LOW RESISTANCE
- Number Of Elements
- 2
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 60V
- Fet Feature
- Logic Level Gate
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 90m Ω @ 3.8A, 10V
- Gate Charge Qg Max Vgs
- 11.2nC @ 10V
- Parça Durumu
- Not For New Designs
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