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HGT1S12N60A4DS

ON Semiconductor

HGT1S12N60A4DS

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$9.87
  • 10+ pcs$9.31
  • 100+ pcs$8.78
  • 500+ pcs$8.29

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Same-day dispatch from stock

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RoHS

Compliant

Support

Technical team support

Specifications

Turn Off Delay Time
96 μs
Test Conditions
390V, 12A, 10 Ω, 15V
Turn On Time
33 ns
Montaj Tipi
Surface Mount
Jesd30 Code
R-PSSO-G2
Case Connection
COLLECTOR
Collectoremitter Breakdown Voltage
600V
Current Collector Pulsed Icm
96A
Polaritychannel Type
N-CHANNEL
ECCN Kodu
EAR99
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Switching Energy
55μJ (on), 50μJ (off)
Max Power Dissipation
167W
Radyasyon Dayanımı
No
Çalışma Sıcaklığı
-55°C~150°C TJ
Parça Durumu
Not For New Designs
Power Dissipation
167W
Vceon Max Vge Ic
2.7V @ 15V, 12A
Kurşunsuz
Lead Free
Td Onoff25c
17ns/96ns
Max Collector Current
54A
Ambalaj
Tube
Collector Emitter Voltage Vceo
600V
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 day ago)
Nem Hassasiyeti (MSL)
1 (Unlimited)
JESD-609 Kodu
e3
Element Configuration
Single
Tepe Reflow Sıcaklığı (°C)
260
Collectoremitter Saturation Voltage
2.7V
Terminal Sayısı
2
Giriş Tipi
Standard
Transistor Application
POWER CONTROL
Terminal Formu
GULL WING
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Temel Parça No
HGT1S12N60
Kurşunsuz Kodu
yes
Montaj
Surface Mount
Weight
1.31247g
Transistor Element Material
SILICON

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