Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Weight
- 1.31247g
- Montaj
- Surface Mount
- Voltage Collector Emitter Breakdown Max
- 1200V
- Transistor Element Material
- SILICON
- Continuous Collector Current
- 55A
- Additional Feature
- LOW CONDUCTION LOSS
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Voltage Rated Dc
- 1.2kV
- Turn Off Timenom Toff
- 330 ns
- Gate Charge
- 100nC
- Akım Değeri
- 35A
- HTS Kodu
- 8541.29.00.95
- Igbt Type
- NPT
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Terminal Sayısı
- 2
- Collectoremitter Saturation Voltage
- 2.7V
- Terminal Formu
- GULL WING
- Transistor Application
- MOTOR CONTROL
- Giriş Tipi
- Standard
- Temel Parça No
- HGT1S10N120
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Yükseklik
- 4.83mm
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2017
- Max Breakdown Voltage
- 1.2kV
- Parça Durumu
- Active
- Rise Timemax
- 15ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 4 Weeks
- Vceon Max Vge Ic
- 2.7V @ 15V, 10A
- Kurşunsuz
- Lead Free
- Power Dissipation
- 298W
- Td Onoff25c
- 23ns/165ns
- Fall Timemax Tf
- 200ns
- Max Collector Current
- 35A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Gateemitter Voltagemax
- 20V
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