Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- 2 N-Channel (Dual)
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 2W
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Fall Time Typ
- 35 ns
- Akım Değeri
- 450mA
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Dual
- Radyasyon Dayanımı
- No
- Seri
- QFET®
- Turn On Delay Time
- 5 ns
- Montaj
- Surface Mount
- Terminal Kaplaması
- Tin (Sn)
- Temel Parça No
- FQS4901
- Drain To Source Breakdown Voltage
- 400V
- Fabrika Tedarik Süresi
- 4 Weeks
- Gate Charge Qg Max Vgs
- 7.5nC @ 10V
- Voltage Rated Dc
- 400V
- Input Capacitance Ciss Max Vds
- 210pF @ 25V
- Rds On Max Id Vgs
- 4.2 Ω @ 225mA, 10V
- Drain Currentmax Abs Id
- 0.45A
- Continuous Drain Current Id
- 450mA
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Fet Feature
- Standard
- Threshold Voltage
- 4V
- Turn Off Delay Time
- 20 ns
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
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