Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Voltage Collector Emitter Breakdown Max
- 1000V
- Reverse Recovery Time
- 1.2 μs
- Turn Off Timenom Toff
- 760 ns
- Parça Durumu
- Not For New Designs
- Genişlik
- 5mm
- Transistor Element Material
- SILICON
- Igbt Type
- NPT and Trench
- Yükseklik
- 26mm
- Giriş Tipi
- Standard
- Akım Değeri
- 60A
- Montaj Tipi
- Through Hole
- Fabrika Tedarik Süresi
- 10 Weeks
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Td Onoff25c
- 140ns/630ns
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Time
- 460 ns
- Collectoremitter Saturation Voltage
- 1.5V
- JESD-609 Kodu
- e3
- Weight
- 6.756g
- Collectoremitter Breakdown Voltage
- 1kV
- Kurşunsuz Kodu
- yes
- Gate Charge
- 275nC
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- N-CHANNEL
- Vceon Max Vge Ic
- 2.9V @ 15V, 60A
- Kılıf / Paket
- TO-264-3, TO-264AA
- Voltage Rated Dc
- 1kV
- Max Power Dissipation
- 180W
- Transistor Application
- POWER CONTROL
- Uzunluk
- 20mm
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- HTS Kodu
- 8541.29.00.95
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Collector Emitter Voltage Vceo
- 1kV
- Power Dissipation
- 180W
- Terminal Kaplaması
- Tin (Sn)
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