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C3 ChipZentronix
FGB20N60SFD

ON Semiconductor

FGB20N60SFD

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$5.65
  • 10+ pcs$5.33
  • 100+ pcs$5.03
  • 500+ pcs$4.74

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Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Number Of Elements
1
Terminal Formu
GULL WING
Kurşunsuz Kodu
yes
Power Dissipation
83W
Additional Feature
LOW CONDUCTION LOSS
RoHS Durumu
ROHS3 Compliant
Vceon Max Vge Ic
2.8V @ 15V, 20A
Yükseklik
4.83mm
Fall Timemax Tf
48ns
Collectoremitter Saturation Voltage
2.8V
Igbt Type
Field Stop
Radyasyon Dayanımı
No
Collectoremitter Breakdown Voltage
600V
Çalışma Sıcaklığı
-55°C~150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Polaritychannel Type
N-CHANNEL
Ambalaj
Tape & Reel (TR)
Fabrika Tedarik Süresi
5 Weeks
Yayın Yılı
2013
Transistor Application
POWER CONTROL
JESD-609 Kodu
e3
Max Breakdown Voltage
600V
Case Connection
COLLECTOR
Weight
1.31247g
Montaj
Surface Mount
Test Conditions
400V, 20A, 10 Ω, 15V
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Gateemitter Thr Voltagemax
6.5V
Power Max
208W
Switching Energy
370μJ (on), 160μJ (off)
Turn On Time
28 ns
Genişlik
9.65mm
Current Collector Pulsed Icm
60A
Collector Emitter Voltage Vceo
600V
HTS Kodu
8541.29.00.95
Terminal Kaplaması
Tin (Sn)
Parça Durumu
Active
Transistor Element Material
SILICON
Jesd30 Code
R-PSSO-G2
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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