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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge
- 65nC
- Max Collector Current
- 40A
- Gateemitter Voltagemax
- 20V
- Max Power Dissipation
- 208W
- Temel Parça No
- FGB20N60
- Giriş Tipi
- Standard
- Uzunluk
- 10.67mm
- Turn Off Timenom Toff
- 123 ns
- Terminal Sayısı
- 2
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Td Onoff25c
- 13ns/90ns
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 600V
- Current Collector Pulsed Icm
- 60A
- Genişlik
- 9.65mm
- HTS Kodu
- 8541.29.00.95
- Terminal Kaplaması
- Tin (Sn)
- Turn On Time
- 28 ns
- Switching Energy
- 370μJ (on), 160μJ (off)
- Jesd30 Code
- R-PSSO-G2
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 4 Weeks
- Weight
- 1.31247g
- Montaj
- Surface Mount
- Test Conditions
- 400V, 20A, 10 Ω, 15V
- Power Max
- 208W
- Gateemitter Thr Voltagemax
- 6.5V
- Yayın Yılı
- 2010
- Transistor Application
- POWER CONTROL
- JESD-609 Kodu
- e3
- Max Breakdown Voltage
- 600V
- Case Connection
- COLLECTOR
- Igbt Type
- Field Stop
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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