Volume pricing
- 1+ pcs$9.67
- 10+ pcs$9.13
- 100+ pcs$8.61
- 500+ pcs$8.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- Trench Field Stop
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Breakdown Voltage
- 1.2kV
- Fabrika Tedarik Süresi
- 10 Weeks
- Weight
- 6.401g
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Gateemitter Thr Voltagemax
- 7.5V
- Yayın Yılı
- 2004
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- POWER CONTROL
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 1
- Power Dissipation
- 339W
- RoHS Durumu
- ROHS3 Compliant
- Vceon Max Vge Ic
- 2V @ 15V, 30A
- Kurşunsuz
- Lead Free
- Turn Off Delay Time
- 198 ns
- Yükseklik
- 20.1mm
- Collectoremitter Saturation Voltage
- 2V
- Uzunluk
- 15.8mm
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 575 ns
- Qualification Status
- Not Qualified
- Pin Sayısı
- 3
- Gate Charge
- 208nC
- Max Collector Current
- 60A
- Gateemitter Voltagemax
- 25V
- Max Power Dissipation
- 339W
- Giriş Tipi
- Standard
- Turn On Delay Time
- 31 ns
- Collector Emitter Voltage Vceo
- 1.2kV
- Current Collector Pulsed Icm
- 90A
- Genişlik
- 5mm
- Terminal Kaplaması
- Tin (Sn)
- HTS Kodu
- 8541.29.00.95
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