FDS6990S

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Minimum Operating Temperature C

-55

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Maximum Continuous Drain Current A

7.5

Number Of Terminals

8

Channel Type

N

Eu Rohs

Compliant

Drainsource On Resistancemax

0.022 Ω

Terminal Pozisyonu

DUAL

Typical Turnon Delay Time Ns

8

Automotive

No

Package Width

3.9

Package Body Material

PLASTIC/EPOXY

Qualification Status

COMMERCIAL

Üretici Parça No

FDS6990S

Pin Sayısı

8

Typical Input Capacitance Vds Pf

1233@15V

Part Package Code

SOT

Tepe Reflow Sıcaklığı (°C)

260

Channel Mode

Enhancement

Drain Currentmax Id

7.5 A

Kurşunsuz Kodu

Yes

Typical Fall Time Ns

11

Lead Shape

Gull-wing

Category

Power MOSFET

Reflow Temperaturemax S

NOT SPECIFIED

Rohs Code

Yes

Standard Package Name

SOP

Maximum Drain Source Resistance Mohm

22@10V

Eccn Us

EAR99

Configuration

Dual Dual Drain

Number Of Elements Per Chip

2

Transistor Element Material

SILICON

Typical Gate Charge Vgs Nc

11@5V

Operating Mode

ENHANCEMENT MODE

Mounting

Surface Mount

Pulsed Drain Currentmax Idm

20 A

Terminal Formu

GULL WING

Maximum Gate Source Voltage V

±20