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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 20nC @ 5V
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 2W
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 10 Weeks
- Turn On Delay Time
- 13 ns
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration
- Dual
- Power Max
- 900mW
- Number Of Elements
- 2
- Terminal Sayısı
- 8
- Contact Plating
- Tin
- Voltage Rated Dc
- -30V
- Uzunluk
- 5mm
- Vgsth Max Id
- 3V @ 250μA
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Fet Feature
- Logic Level Gate
- Rise Time
- 22ns
- Drain To Source Voltage Vdss
- 30V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Dual Supply Voltage
- -30V
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 2W
- Seri
- PowerTrench®
- Drain To Source Breakdown Voltage
- -30V
- Rds On Max Id Vgs
- 32m Ω @ 6A, 10V
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Radyasyon Dayanımı
- No
- Genişlik
- 4mm
- Ambalaj
- Tape & Reel (TR)
- Threshold Voltage
- -1.7V
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2017
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Direnç
- 32mOhm
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