Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 1.575mm
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Element Material
- SILICON
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2006
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 3.9mm
- Radyasyon Dayanımı
- No
- Nominal Vgs
- 1.8 V
- Parça Durumu
- Active
- Weight
- 187mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 1130pF @ 15V
- Turn Off Delay Time
- 26 ns
- JESD-609 Kodu
- e3
- Fet Type
- 2 N-Channel (Dual)
- Akım Değeri
- 7.5A
- Continuous Drain Current Id
- 7.5A
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 5 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Rise Time
- 5ns
- Drainsource On Resistancemax
- 0.013Ohm
- Fet Feature
- Logic Level Gate
- Voltage Rated Dc
- 20V
- Vgsth Max Id
- 3V @ 250μA
- Uzunluk
- 4.9mm
- Number Of Elements
- 2
- Element Configuration
- Dual
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 8
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 900mW
- Gate Charge Qg Max Vgs
- 24nC @ 10V
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