FDS6911

Specifications

Yükseklik

1.575mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Yayın Yılı

2006

Ambalaj

Tape & Reel (TR)

Genişlik

3.9mm

Radyasyon Dayanımı

No

Nominal Vgs

1.8 V

Parça Durumu

Active

Weight

187mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1130pF @ 15V

Turn Off Delay Time

26 ns

JESD-609 Kodu

e3

Fet Type

2 N-Channel (Dual)

Akım Değeri

7.5A

Continuous Drain Current Id

7.5A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Fall Time Typ

5 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Rise Time

5ns

Drainsource On Resistancemax

0.013Ohm

Fet Feature

Logic Level Gate

Voltage Rated Dc

20V

Vgsth Max Id

3V @ 250μA

Uzunluk

4.9mm

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Max Power Dissipation

900mW

Gate Charge Qg Max Vgs

24nC @ 10V