Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.2V @ 250μA
- Kılıf / Paket
- 8-PowerWDFN
- Fet Type
- 2 N-Channel (Dual) Asymmetrical
- Terminal Sayısı
- 8
- Transistor Element Material
- SILICON
- Uzunluk
- 3.3mm
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 2W
- Terminal Kaplaması
- Tin (Sn)
- Yükseklik
- 725μm
- Input Capacitance Ciss Max Vds
- 1075pF @ 13V
- Genişlik
- 3.3mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 12V
- Power Max
- 800mW 900mW
- Fall Time Typ
- 3 ns
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 8nC @ 4.5V
- Fabrika Tedarik Süresi
- 12 Weeks
- Rise Time
- 3ns
- Current Continuous Drain Id25
- 13A 26A
- Weight
- 192mg
- Number Of Elements
- 2
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 7m Ω @ 12A, 4.5V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- ECCN Kodu
- EAR99
- Jedec95 Code
- MO-240BA
- Yayın Yılı
- 2010
- Drain Currentmax Abs Id
- 13A
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Drainsource On Resistancemax
- 0.007Ohm
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Turn Off Delay Time
- 34 ns
- Fet Feature
- Logic Level Gate
- Montaj
- Surface Mount
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