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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Feedback Capmax Crss
- 375 pF
- Element Configuration
- Dual
- Fall Time Typ
- 32 ns
- Parça Durumu
- Active
- Rise Time
- 11ns
- Gate Charge Qg Max Vgs
- 13nC @ 4.5V
- Fabrika Tedarik Süresi
- 16 Weeks
- Number Of Elements
- 2
- Weight
- 9mg
- Current Continuous Drain Id25
- 12A 16A
- Vgsth Max Id
- 3V @ 250μA
- Contact Plating
- Gold
- Fet Type
- 2 N-Channel (Dual)
- Kılıf / Paket
- 8-PowerWDFN
- Uzunluk
- 5mm
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 1W
- Yükseklik
- 825μm
- Input Capacitance Ciss Max Vds
- 1705pF @ 15V
- Kurşunsuz
- Lead Free
- Genişlik
- 6mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 20V
- Fet Feature
- Logic Level Gate
- Power Dissipation
- 2.5W
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 16A
- Montaj
- Surface Mount
- Seri
- PowerTrench®
- Drain To Source Breakdown Voltage
- 30V
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e4
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 8.5m Ω @ 12A, 10V
- ECCN Kodu
- EAR99
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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