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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2009
- Drain To Source Breakdown Voltage
- 30V
- Vgsth Max Id
- 2.7V @ 250μA
- Max Power Dissipation
- 2.5W
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Seri
- PowerTrench®
- Weight
- 171mg
- Kılıf / Paket
- 8-PowerTDFN
- Gate Charge Qg Max Vgs
- 24nC @ 10V
- Continuous Drain Current Id
- 60A
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 2
- Current Continuous Drain Id25
- 13A 18A
- Input Capacitance Ciss Max Vds
- 1605pF @ 15V
- Drainsource On Resistancemax
- 0.01Ohm
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 24 ns
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- 2 N-Channel (Dual) Asymmetrical
- Rise Time
- 3ns
- Feedback Capmax Crss
- 55 pF
- Uzunluk
- 5mm
- Yükseklik
- 1.1mm
- Montaj
- Surface Mount
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- ECCN Kodu
- EAR99
- Genişlik
- 5.9mm
- Power Max
- 1W
- Fabrika Tedarik Süresi
- 13 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
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