Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual) Asymmetrical
- Drain To Source Breakdown Voltage
- 25V
- Vgsth Max Id
- 2V @ 250μA
- Max Power Dissipation
- 1W
- Yükseklik
- 1.05mm
- Uzunluk
- 5.1mm
- Power Dissipation
- 2.5W
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Montaj
- Surface Mount
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Seri
- PowerTrench®
- Weight
- 171mg
- ECCN Kodu
- EAR99
- Kılıf / Paket
- 8-PowerTDFN
- Gate Charge Qg Max Vgs
- 26nC @ 10V
- Continuous Drain Current Id
- 34A
- Genişlik
- 6.1mm
- Element Configuration
- Dual
- Ambalaj
- Tape & Reel (TR)
- Fabrika Tedarik Süresi
- 13 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Tin (Sn)
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- Current Continuous Drain Id25
- 17.5A 34A
- Drain Currentmax Abs Id
- 17.5A
- Turn On Delay Time
- 7 ns
- Input Capacitance Ciss Max Vds
- 1570pF @ 13V
- Case Connection
- DRAIN SOURCE
- Fet Feature
- Logic Level Gate
- Drainsource On Resistancemax
- 0.005Ohm
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