FDMS001N025DSD

Specifications

Input Capacitance Ciss Max Vds

1370pF 5105pF @ 13V

Fet Feature

Standard

Drain Currentmax Abs Id

19A

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

19A Ta 69A Tc 38A Ta 165A Tc

REACH Uyumluluk Kodu

not_compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Transistor Application

SWITCHING

Yüzey Montaj

YES

Avalanche Energy Rating Eas

121 mJ

Jesd30 Code

R-PDSO-N8

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

25V

Rds On Max Id Vgs

3.25m Ω @ 19A, 10V, 920μ Ω @ 38A, 10V

Terminal Formu

NO LEAD

Pulsed Drain Currentmax Idm

381A

Drainsource On Resistancemax

0.00325Ohm

Drain To Source Voltage Vdss

25V

Seri

PowerTrench®

Lifecycle Status

ACTIVE (Last Updated: 3 weeks ago)

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Vgsth Max Id

2.5V @ 320μA, 3V @ 1mA

Fet Type

2 N-Channel (Dual) Asymmetrical

RoHS Durumu

Non-RoHS Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

23 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Max

2.1W Ta 26W Tc 2.3W Ta 42W Tc

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

30nC, 104nC @ 10V

Kılıf / Paket

8-PowerWDFN