Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fall Time Typ
- 1.7 ns
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Radyasyon Dayanımı
- No
- Case Connection
- DRAIN
- Number Of Elements
- 2
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Rds On Max Id Vgs
- 66m Ω @ 3.4A, 4.5V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Weight
- 25.2mg
- Power Max
- 600mW
- Threshold Voltage
- 700mV
- Continuous Drain Current Id
- 3.8A
- Drain Currentmax Abs Id
- 3.4A
- Gate To Source Voltage Vgs
- 8V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Pin Sayısı
- 6
- JESD-609 Kodu
- e4
- Genişlik
- 1.6mm
- Turn On Delay Time
- 4.5 ns
- Fabrika Tedarik Süresi
- 16 Weeks
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2008
- Seri
- PowerTrench®
- Element Configuration
- Dual
- Kurşunsuz Kodu
- yes
- Feedback Capmax Crss
- 40 pF
- Yükseklik
- 500μm
- Max Power Dissipation
- 1.4W
- Gate Charge Qg Max Vgs
- 4.2nC @ 4.5V
- Drain To Source Voltage Vdss
- 20V
- Input Capacitance Ciss Max Vds
- 300pF @ 10V
- Power Dissipation
- 1.3W
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