FDMC8030

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

12V

Threshold Voltage

1.5V

Continuous Drain Current Id

12A

Weight

196mg

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

10m Ω @ 12A, 10V

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Radyasyon Dayanımı

No

Case Connection

DRAIN SOURCE

Parça Durumu

Active

Terminal Kaplaması

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Fall Time Typ

3 ns

Terminal Sayısı

8

Lifecycle Status

ACTIVE (Last Updated: 3 hours ago)

Vgsth Max Id

2.8V @ 250μA

Additional Feature

AVALANCHE RATED

Turn Off Delay Time

19 ns

Kılıf / Paket

8-PowerWDFN

Fet Type

2 N-Channel (Dual)

Montaj

Surface Mount

Max Junction Temperature Tj

150°C

Gate Charge Qg Max Vgs

30nC @ 10V

Drain To Source Voltage Vdss

40V

Drain To Source Breakdown Voltage

40V

Uzunluk

3mm

RoHS Durumu

ROHS3 Compliant

Rise Time

3ns

Input Capacitance Ciss Max Vds

1975pF @ 20V

Number Of Channels

2

Power Dissipation

1.9W

Yükseklik

800μm

Max Power Dissipation

800mW

Kurşunsuz Kodu

yes