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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Gate To Source Voltage Vgs
- 12V
- Threshold Voltage
- 1.5V
- Continuous Drain Current Id
- 12A
- Weight
- 196mg
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 10m Ω @ 12A, 10V
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Case Connection
- DRAIN SOURCE
- Parça Durumu
- Active
- Terminal Kaplaması
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Fall Time Typ
- 3 ns
- Terminal Sayısı
- 8
- Lifecycle Status
- ACTIVE (Last Updated: 3 hours ago)
- Vgsth Max Id
- 2.8V @ 250μA
- Additional Feature
- AVALANCHE RATED
- Turn Off Delay Time
- 19 ns
- Kılıf / Paket
- 8-PowerWDFN
- Fet Type
- 2 N-Channel (Dual)
- Montaj
- Surface Mount
- Max Junction Temperature Tj
- 150°C
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Drain To Source Voltage Vdss
- 40V
- Drain To Source Breakdown Voltage
- 40V
- Uzunluk
- 3mm
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 3ns
- Input Capacitance Ciss Max Vds
- 1975pF @ 20V
- Number Of Channels
- 2
- Power Dissipation
- 1.9W
- Yükseklik
- 800μm
- Max Power Dissipation
- 800mW
- Kurşunsuz Kodu
- yes
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