Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nominal Vgs
- -600 mV
- Kılıf / Paket
- 6-VDFN Exposed Pad
- Turn Off Delay Time
- 62 ns
- Vgsth Max Id
- 1V @ 250μA
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Montaj
- Surface Mount
- Reach Svhc
- No SVHC
- Fet Type
- 2 P-Channel (Dual)
- Power Dissipation
- 1.4W
- Input Capacitance Ciss Max Vds
- 530pF @ 15V
- Rise Time
- 4ns
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 2mm
- Drain To Source Breakdown Voltage
- 30V
- Drain To Source Voltage Vdss
- 30V
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 1.4W
- Yükseklik
- 750μm
- Element Configuration
- Dual
- Seri
- PowerTrench®
- Yayın Yılı
- 2006
- Fabrika Tedarik Süresi
- 16 Weeks
- Turn On Delay Time
- 5 ns
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Pin Sayısı
- 6
- Genişlik
- 2mm
- JESD-609 Kodu
- e4
- Direnç
- 90MOhm
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 8V
- Continuous Drain Current Id
- 2.9A
- Power Max
- 700mW
- Threshold Voltage
- -600mV
- Operating Mode
- ENHANCEMENT MODE
- Weight
- 40mg
- Rds On Max Id Vgs
- 90m Ω @ 2.9A, 4.5V
- Transistor Application
- SWITCHING
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