Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz Kodu
- yes
- Yükseklik
- 750μm
- Max Power Dissipation
- 800mW
- Gate Charge Qg Max Vgs
- 6nC @ 4.5V
- Drain To Source Voltage Vdss
- 20V
- Input Capacitance Ciss Max Vds
- 435pF @ 10V
- Power Dissipation
- 1.4W
- Drain To Source Breakdown Voltage
- -20V
- Uzunluk
- 2mm
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 11ns
- Fet Type
- 2 P-Channel (Dual)
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Vgsth Max Id
- 1.3V @ 250μA
- Turn Off Delay Time
- 15 ns
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kılıf / Paket
- 6-VDFN Exposed Pad
- Pin Sayısı
- 6
- JESD-609 Kodu
- e4
- Genişlik
- 2mm
- Turn On Delay Time
- 9 ns
- Fabrika Tedarik Süresi
- 16 Weeks
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Seri
- PowerTrench®
- Element Configuration
- Dual
- Weight
- 40mg
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Continuous Drain Current Id
- 2.2A
- Gate To Source Voltage Vgs
- 8V
- Terminal Formu
- NO LEAD
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Parça Durumu
- Active
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fall Time Typ
- 11 ns
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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