Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 6-VDFN Exposed Pad
- Vgsth Max Id
- 1V @ 250μA
- Terminal Formu
- NO LEAD
- Ds Breakdown Voltagemin
- 20V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Fet Feature
- Standard
- Drain Currentmax Abs Id
- 3.7A
- Power Dissipationmax Abs
- 1.5W
- Fet Type
- 2 P-Channel (Dual)
- Input Capacitance Ciss Max Vds
- 655pF @ 10V
- Yüzey Montaj
- YES
- Drainsource On Resistancemax
- 0.072Ohm
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 12nC @ 4.5V
- Power Max
- 700mW Ta
- Drain To Source Voltage Vdss
- 20V
- Jesd30 Code
- S-PDSO-N6
- Feedback Capmax Crss
- 135 pF
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 72m Ω @ 3.7A, 4.5V
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 3.7A Ta
- Seri
- PowerTrench®
- Montaj Tipi
- Surface Mount
- Case Connection
- DRAIN
- Number Of Elements
- 2
- Jedec95 Code
- MO-229VCCC
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 6
- Fabrika Tedarik Süresi
- 16 Weeks
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
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