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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 1.25mm
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Threshold Voltage
- 850mV
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2017
- Direnç
- 4Ohm
- Current Continuous Drain Id25
- 220mA 410mA
- Yükseklik
- 1mm
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 8V
- Fall Time Typ
- 8 ns
- Continuous Drain Current Id
- 220mA
- ECCN Kodu
- EAR99
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Fet Type
- N and P-Channel
- Akım Değeri
- 220mA
- Nominal Vgs
- 850 mV
- Parça Durumu
- Active
- Weight
- 28mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn Off Delay Time
- 55 ns
- Input Capacitance Ciss Max Vds
- 9.5pF @ 10V
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 300mW
- Gate Charge Qg Max Vgs
- 0.4nC @ 4.5V
- Fabrika Tedarik Süresi
- 10 Weeks
- Number Of Elements
- 2
- Element Configuration
- Dual
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 6
- Vgsth Max Id
- 1.5V @ 250μA
- Uzunluk
- 2mm
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