Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Elements
- 2
- Element Configuration
- Dual
- Terminal Sayısı
- 6
- Gate Charge Qg Max Vgs
- 2.5nC @ 4.5V
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 300mW
- Fabrika Tedarik Süresi
- 10 Weeks
- Turn On Delay Time
- 5 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Fet Feature
- Logic Level Gate
- Rise Time
- 15ns
- Voltage Rated Dc
- -20V
- Uzunluk
- 2mm
- Vgsth Max Id
- 1.5V @ 250μA
- Kurşunsuz Kodu
- yes
- Drain To Source Voltage Vdss
- 20V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 6
- Montaj
- Surface Mount
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Rds On Max Id Vgs
- 400m Ω @ 600mA, 4.5V
- Drain To Source Breakdown Voltage
- -20V
- Seri
- PowerTrench®
- Power Dissipation
- 300mW
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 1.25mm
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 1mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Tin (Sn)
- Direnç
- 400MOhm
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 600mA
- Gate To Source Voltage Vgs
- 8V
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