Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 0.4nC @ 4.5V
- Max Power Dissipation
- 300mW
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 42 Weeks
- Radyasyon Dayanımı
- No
- Ambalaj
- Tape & Reel (TR)
- Turn On Delay Time
- 5 ns
- Threshold Voltage
- 850mV
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material
- SILICON
- Number Of Elements
- 2
- Element Configuration
- Dual
- Terminal Sayısı
- 6
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 1.5V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Lifecycle Status
- ACTIVE (Last Updated: 6 days ago)
- Yükseklik
- 1.1mm
- Fet Feature
- Logic Level Gate
- Drainsource On Resistancemax
- 4Ohm
- Rise Time
- 4.5ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 25V
- Gate To Source Voltage Vgs
- 8V
- Pin Sayısı
- 6
- Fall Time Typ
- 3.2 ns
- Montaj
- Surface Mount
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Continuous Drain Current Id
- 220mA
- Kurşunsuz Kodu
- yes
- Power Dissipation
- 300mW
- Seri
- Automotive, AEC-Q101
- Fet Type
- 2 N-Channel (Dual)
- Weight
- 28mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Max Junction Temperature Tj
- 150°C
- Rds On Max Id Vgs
- 4 Ω @ 220mA, 4.5V
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