Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Elements
- 2
- Power Max
- 300mW
- Element Configuration
- Dual
- Terminal Sayısı
- 6
- Contact Plating
- Tin
- Gate Charge Qg Max Vgs
- 2.6nC @ 4.5V
- Max Power Dissipation
- 360mW
- Montaj Tipi
- Surface Mount
- Reach Svhc
- No SVHC
- Fabrika Tedarik Süresi
- 10 Weeks
- Turn On Delay Time
- 3.7 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Fet Feature
- Logic Level Gate
- Drainsource On Resistancemax
- 0.175Ohm
- Rise Time
- 1.7ns
- Uzunluk
- 2mm
- Vgsth Max Id
- 1V @ 250μA
- Qualification Status
- Not Qualified
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kurşunsuz Kodu
- yes
- Drain To Source Voltage Vdss
- 20V
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 6
- Montaj
- Surface Mount
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Rds On Max Id Vgs
- 175m Ω @ 1.2A, 4.5V
- Drain To Source Breakdown Voltage
- 20V
- Seri
- PowerTrench®
- Power Dissipation
- 360mW
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Threshold Voltage
- 800mV
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2007
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 1.25mm
- RoHS Durumu
- ROHS3 Compliant
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