FDD3510H

Specifications

JESD-609 Kodu

e3

Turn Off Delay Time

25 ns

Input Capacitance Ciss Max Vds

800pF @ 40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

260.37mg

Parça Durumu

Active

Rds On Max Id Vgs

80m Ω @ 4.3A, 10V

Drain To Source Breakdown Voltage

80V

Fet Type

N and P-Channel, Common Drain

Power Dissipation

3.1W

Seri

PowerTrench®

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

ECCN Kodu

EAR99

Continuous Drain Current Id

2.8A

Drain Currentmax Abs Id

4.3A

Kurşunsuz Kodu

yes

Fall Time Typ

5 ns

Montaj

Surface Mount

Kılıf / Paket

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

3ns

Terminal Kaplaması

Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

4.3A 2.8A

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Vgsth Max Id

4V @ 250μA

Direnç

80MOhm

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G4

Avalanche Energy Rating Eas

37 mJ

Terminal Sayısı

4

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Number Of Elements

2