Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 960mW
- Current Continuous Drain Id25
- 3A 2.2A
- Rds On Max Id Vgs
- 70m Ω @ 3A, 4.5V
- Akım Değeri
- 3A
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Continuous Drain Current Id
- 3A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 4.6nC @ 4.5V
- Terminal Sayısı
- 6
- Rise Time
- 12ns
- Fall Time Typ
- 12 ns
- Number Of Elements
- 2
- Reach Svhc
- No SVHC
- Direnç
- 70MOhm
- Radyasyon Dayanımı
- No
- Fet Type
- N and P-Channel
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Turn Off Delay Time
- 10 ns
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Gate To Source Voltage Vgs
- 12V
- Seri
- PowerTrench®
- Terminal Kaplaması
- TIN (SN)
- Terminal
- SMD/SMT
- Yükseklik
- 900μm
- Input Capacitance Ciss Max Vds
- 324pF @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kurşunsuz
- Lead Free
- Weight
- 36mg
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 30
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application
- SWITCHING
- Max Junction Temperature Tj
- 150°C
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