Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 125m Ω @ 2.2A, 4.5V
- Akım Değeri
- -2.2A
- Power Dissipation
- 960mW
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 P-Channel (Dual)
- Radyasyon Dayanımı
- No
- Direnç
- 125MOhm
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 5.2nC @ 4.5V
- Continuous Drain Current Id
- 2.2A
- Rise Time
- 12ns
- Terminal Sayısı
- 6
- Reach Svhc
- No SVHC
- Genişlik
- 1.7mm
- Number Of Elements
- 2
- Fall Time Typ
- 12 ns
- ECCN Kodu
- EAR99
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Turn Off Delay Time
- 10 ns
- Transistor Element Material
- SILICON
- Seri
- PowerTrench®
- Gate To Source Voltage Vgs
- 12V
- Terminal Kaplaması
- Tin (Sn)
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Power Max
- 700mW
- Yükseklik
- 1mm
- Voltage Rated Dc
- -20V
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Breakdown Voltage
- -20V
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 337pF @ 10V
- Ambalaj
- Tape & Reel (TR)
- Weight
- 36mg
- Kurşunsuz
- Lead Free
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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