Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- -120mA
- Rds On Max Id Vgs
- 10 Ω @ 200mA, 4.5V
- Current Continuous Drain Id25
- 120mA
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 900mW
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Fet Type
- 2 P-Channel (Dual)
- Fall Time Typ
- 5 ns
- Number Of Elements
- 2
- Genişlik
- 1.68mm
- Reach Svhc
- No SVHC
- Terminal Sayısı
- 6
- Rise Time
- 8ns
- Continuous Drain Current Id
- -120mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 0.31nC @ 4.5V
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 9 ns
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 8V
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Voltage Rated Dc
- -25V
- Yükseklik
- 1.12mm
- Power Max
- 700mW
- Terminal
- SMD/SMT
- Drain To Source Breakdown Voltage
- -25V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nominal Vgs
- -1 V
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Tape & Reel (TR)
- Weight
- 36mg
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
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