FDB66N15TM

Specifications

Pulsed Drain Currentmax Idm

264 A

Eu Rohs

Compliant with Exemption

Package Length

10.67(Max)

Part Package Code

TO-263

Ppap

No

Üretici Parça No

FDB66N15TM

Number Of Elements

1

Part Life Cycle Code

Obsolete

Package Body Material

PLASTIC/EPOXY

Typical Input Capacitance Vds Pf

2200@25V

Maximum Drain Source Voltage V

150

Automotive

No

Channel Mode

Enhancement

Package Width

9.65(Max)

Number Of Terminals

2

REACH Uyumluluk Kodu

not_compliant

Pcb Changed

2

Terminal Pozisyonu

SINGLE

Typical Gate Charge Vgs Nc

49@10V

Number Of Elements Per Chip

1

Tab

Tab

Terminal Formu

GULL WING

Maximum Gate Source Voltage V

±30

Mounting

Surface Mount

Standard Package Name

TO-263

Typical Turnon Delay Time Ns

40

Transistor Element Material

SILICON

Case Connection

DRAIN

Typical Gate Charge10v Nc

49

Risk Rank

5.39

Maximum Continuous Drain Current A

66

Package Description

LEAD FREE, D2PAK-3

Ambalaj

Tape and Reel

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Minimum Operating Temperature C

-55

Polaritychannel Type

N-CHANNEL

Maximum Power Dissipation Mw

357000

Yüzey Montaj

YES