EMD5DXV6T1G

Specifications

Power Dissipationmax Abs

0.5W

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Current Collector Cutoff Max

500nA

Currentcollector Ic Max

100mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Resistor Base R1

4.7k Ω, 47k Ω

Power Max

500mW

Yayın Yılı

2014

Parça Durumu

Obsolete

REACH Uyumluluk Kodu

compliant

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V / 20 @ 5mA 10V

Number Of Elements

2

RoHS Durumu

RoHS Compliant

Resistor Emitter Base R2

10k Ω, 47k Ω

Transistor Element Material

SILICON

Kılıf / Paket

SOT-563, SOT-666

Yüzey Montaj

YES

Voltage Collector Emitter Breakdown Max

50V

JESD-609 Kodu

e3

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Polaritychannel Type

NPN/PNP